Maximum Power Dissipation Pd:
1.9W
Maximum Drain Source Voltage Vds:
12V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Resistance Rds:
12.9mΩ
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Package Type:
VSON-CLIP
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
10.7A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Automotive Standard:
AEC-Q101
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
10.3mOhm @ 10A, 8V
Gate Charge (Qg) (Max) @ Vgs:
5.1 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD17308Q3T Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
3V, 8V
edacadModelUrl:
/en/models/5985436
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+10V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta), 28W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 15 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 44A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD17308
ECCN:
EAR99
