IXYS IXFP4N100Q
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
3Ohm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1050 pF @ 25 V
Mounting Type:
Through Hole
Series:
HiPerFET™, Q Class
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFP4N100
ECCN:
EAR99
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FAQs
Yes. You can also search IXFP4N100Q on website for other similar products.
We accept all major payment methods for all products including ET10832439. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFP4N100Q directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFP4N100Q. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFP4N100Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10832439 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10832439.
Yes. We ship IXFP4N100Q Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFP4N100Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 3ohm @ 2a, 10v. The maximum gate charge and given voltages include 39 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 1050 pf @ 25 v. The product is available in through hole configuration. The product hiperfet™, q class, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfp4n100, a base product number of the product. The product is designated with the ear99 code number.
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