IXYS MMIX1F230N20T
Product Information
Category:
Power MOSFET
Dimensions:
25.25 x 23.25 x 5.7mm
Maximum Continuous Drain Current:
168 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
358 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
24000 pF@ 25 V
Length:
25.25mm
Pin Count:
24
Forward Transconductance:
150S
Typical Turn-Off Delay Time:
62 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
600 W
Series:
GigaMOS, HiperFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.7mm
Typical Turn-On Delay Time:
58 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
8.3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
378 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
600W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
28000 pF @ 25 V
standardLeadTime:
45 Weeks
Mounting Type:
Surface Mount
Series:
GigaMOS™, HiPerFET™, TrenchT2™
Supplier Device Package:
24-SMPD
Current - Continuous Drain (Id) @ 25°C:
168A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F230
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET10686285 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10686285.
Yes. We ship MMIX1F230N20T Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is MMIX1F230N20T. It is of power mosfet category . The given dimensions of the product include 25.25 x 23.25 x 5.7mm. While 168 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 358 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 24000 pf@ 25 v . Its accurate length is 25.25mm. It contains 24 pins. The forward transconductance is 150s . Whereas, its typical turn-off delay time is about 62 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 600 w maximum power dissipation. The product gigamos, hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.7mm. In addition, it has a typical 58 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 8.3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 8.3mohm @ 60a, 10v. The maximum gate charge and given voltages include 378 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 600w (tc). The product's input capacitance at maximum includes 28000 pf @ 25 v. It has a long 45 weeks standard lead time. The product gigamos™, hiperfet™, trencht2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. The continuous current drain at 25°C is 168a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f230, a base product number of the product. The product is designated with the ear99 code number.
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