Infineon Technologies IPI65R190C6XKSA1

IPI65R190C6XKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 730µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
190mOhm @ 7.3A, 10V
title:
IPI65R190C6XKSA1
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
151W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1620 pF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 10 V
Supplier Device Package:
PG-TO262-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IPI65R190C6XKSA1. The typical Vgs (th) (max) of the product is 3.5v @ 730µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 190mohm @ 7.3a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 151w (tc). The product's input capacitance at maximum includes 1620 pf @ 100 v. The product is available in through hole configuration. The product coolmos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 73 nc @ 10 v. pg-to262-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 20.2a (tc). This product use mosfet (metal oxide) technology.

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FAQs

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