Vishay General Semiconductor - Diodes Division SE10FD-M3/H

SE10FD-M3-H Vishay General Semiconductor - Diodes Division SE10FD-M3/H
Vishay General Semiconductor - Diodes Division

Product Information

Base Part Number:
SE10
Detailed Description:
Diode Standard 200V 1A Surface Mount DO-219AB (SMF)
Reverse Recovery Time (trr):
780ns
Current - Reverse Leakage @ Vr:
5µA @ 200V
Operating Temperature - Junction:
-55°C ~ 175°C
Mounting Type:
Surface Mount
Voltage - DC Reverse (Vr) (Max):
200V
Capacitance @ Vr, F:
7.5pF @ 4V, 1MHz
Voltage - Forward (Vf) (Max) @ If:
1.05V @ 1A
Supplier Device Package:
DO-219AB (SMF)
Packaging:
Cut Tape (CT)
Customer Reference:
Current - Average Rectified (Io):
1A
Package / Case:
DO-219AB
Diode Type:
Standard
Speed:
Standard Recovery >500ns, > 200mA (Io)
Manufacturer:
Vishay General Semiconductor - Diodes Division
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This is manufactured by Vishay General Semiconductor - Diodes Division. The manufacturer part number is SE10FD-M3/H. Base Part Number: se10. It features diode standard 200v 1a surface mount do-219ab (smf). It has a trr (reverse recovery time) of 780ns. 5µa @ 200v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from -55°c ~ 175°c. The product is available in surface mount configuration. While it has maximum reverse voltage of 200v. Moreover, the product has a 7.5pf @ 4v, 1mhz capacitance. The product has a maximum forward voltage of 1.05v @ 1a. do-219ab (smf) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It features a 1a of average rectified current. Moreover, the product comes in do-219ab. It is designed with a standard diode. It has a robust speed of standard recovery >500ns, > 200ma (io). The vishay general semiconductor - diodes division's product offers user-desired applications.

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Mult Dev Plating House Add 15/Jan/2021(PCN Assembly/Origin)
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SE10F(D,G,J)(Datasheets)

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