Toshiba Semiconductor and Storage TRS6E65F,S1Q
Product Information
HTSUS:
8541.10.0080
RoHS Status:
RoHS Compliant
Package / Case:
TO-220-2
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 6 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
22pF @ 650V, 1MHz
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
20 Weeks
Current - Reverse Leakage @ Vr:
30 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-2L
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS6E65
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS6E65F,S1Q. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs compliant. Moreover, the product comes in to-220-2. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It has a trr (reverse recovery time) of 0 ns. It features a 6a of average rectified current. The product has a maximum forward voltage of 1.6 v @ 6 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Moreover, the product has a 22pf @ 650v, 1mhz capacitance. Its typical moisture sensitivity level is 1 (unlimited). It has a long 20 weeks standard lead time. 30 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220-2l is the supplier device package value. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs6e65, a base product number of the product. The product is designated with the ear99 code number.
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