Toshiba Semiconductor and Storage TRS4A65F,S1Q
Product Information
Reverse Recovery Time (trr):
0 ns
HTSUS:
8541.10.0080
Package / Case:
TO-220-2 Full Pack
edacadModel:
TRS4A65F,S1Q Models
Operating Temperature - Junction:
175°C (Max)
Speed:
No Recovery Time > 500mA (Io)
edacadModelUrl:
/en/models/12153179
Current - Average Rectified (Io):
4A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 4 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
650 V
Capacitance @ Vr, F:
16pF @ 650V, 1MHz
standardLeadTime:
20 Weeks
Current - Reverse Leakage @ Vr:
20 µA @ 650 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-2L
Technology:
SiC (Silicon Carbide) Schottky
Base Product Number:
TRS4A65
ECCN:
EAR99
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Yes. We ship TRS4A65F,S1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TRS4A65F,S1Q. It has a trr (reverse recovery time) of 0 ns. It is assigned with possible HTSUS value of 8541.10.0080. Moreover, the product comes in to-220-2 full pack. The product operate at temperatures ranging from 175°c (max). It has a robust speed of no recovery time > 500ma (io). It features a 4a of average rectified current. The product has a maximum forward voltage of 1.6 v @ 4 a. It is shipped in tube package . While it has maximum reverse voltage of 650 v. Moreover, the product has a 16pf @ 650v, 1mhz capacitance. It has a long 20 weeks standard lead time. 20 µa @ 650 v is the reverse leakage value of a bespoke product. The product is available in through hole configuration. to-220f-2l is the supplier device package value. This product use sic (silicon carbide) schottky technology. Moreover, it corresponds to trs4a65, a base product number of the product. The product is designated with the ear99 code number.
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