OSI Optoelectronics APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics

Product Information

Polarity:
Reverse
Width:
5 mm
Automotive Standard:
No
Typical Rise Time:
0.6ns
Maximum Wavelength Detected:
1100nm
Minimum Wavelength Detected:
600nm
Package Type:
TO-52
Dark Current:
0.2nA
Number of Pins:
3
Product Type:
Photodiode
Maximum Operating Temperature:
85°C
Typical Fall Time:
0.6ns
Angle of Half Sensitivity:
65 °
Length:
5mm
Standards/Approvals:
RoHS
Mount Type:
Through Hole
Diameter:
5.4 mm
Wavelength of Peak Sensitivity:
800nm
Height:
3.8mm
Packaging:
Tape & Reel
Breakdown Voltage:
30V
Minimum Operating Temperature:
-25°C
Spectrums Detected:
Infrared
Amplified:
No
RoHs Compliant
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This is IR Si Photodiode Through Hole TO-52 manufactured by OSI Optoelectronics. The manufacturer part number is APD05-8-150-T52L. While providing reverse polarity. Furthermore, the product is 5 mm wide. The product complies with automotive standard - no. It has a typical 0.6ns rise time . In addition, it has a maximum 1100nm detected wavelength . Moreover, it has a minimum 600nm detected wavelength . The package is a sort of to-52. It is comprised of 3 pins. photodiode is a versatile product designed to provide user-defined applications. It has a maximum operating temperature of 85°c. It has a typical 0.6ns fall time . It has 65 ° angle of half sensitivity . Its accurate length is 5mm. It has a through hole type mount . Its diameter is 5.4 mm. Furthermore, its wavelength of peak sensitivity is 800nm . In addition, the height is 3.8mm. In addition, tape & reel is the available packaging type of the product. In addition, it has a standard 30v breakdown voltage . Whereas, the minimum operating temperature of the product is -25°c. Moreover, it detects infrared spectrums .

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APD Series Silicon Avalanche Photodiode Data Sheet(Technical Reference)

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