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This is Silicon carbide Power MOSFET 1200 V 21 manufactured by STMicroelectronics. The manufacturer part number is SCTWA70N120G2V-4. It has a maximum of 1200 v drain source voltage. The product carries enhancement channel mode. The product is available in through hole configuration. The transistor is manufactured from highly durable silicon material. The product carries 4.9v of maximum gate threshold voltage. It provides up to 0.03 ω maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 91 a of maximum continuous drain current. The product is available in [Cannel Type] channel. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 30mohm @ 50a, 18v. The maximum gate charge and given voltages include 150 nc @ 18 v. The typical Vgs (th) (max) of the product is 4.9v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 3540 pf @ 800 v. to-247-4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 91a (tc). The product carries maximum power dissipation 547w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa70, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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