Forward Voltage Vf:
3.3V
Width:
21.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
73nC
Package Type:
Hip-247
Maximum Continuous Drain Current Id:
45A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
67mΩ
Maximum Operating Temperature:
200°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
20.1mm
Standards/Approvals:
No
Pin Count:
4
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
240W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
SCTWA35N65G2V-4
Height:
5.1mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTWA35N65G2V-4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
edacadModelUrl:
/en/models/18085222
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+18V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
240W (Tc)
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTWA35
ECCN:
EAR99
