Forward Voltage Vf:
1.2V
Width:
3.7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
9.1nC
Package Type:
SOT-223
Maximum Continuous Drain Current Id:
2A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
3Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
500V
Channel Type:
Type N
Length:
6.7mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
2W
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
25 V
Series:
UniFET II
Height:
1.7mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
3Ohm @ 1A, 10V
title:
FDT4N50NZU
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
476 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFRFET™, Unifet™ II
Gate Charge (Qg) (Max) @ Vgs:
9.1 nC @ 10 V
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
