Dual N-Channel MOSFET, 72 A, 650 V, 3-Pin TO247-3 STMicroelectronics STWA68N65DM6AG
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
4.75V
Maximum Drain Source Resistance:
0.039 Ω
Package Type:
TO-247
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
72 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
39mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs:
118 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
5900 pF @ 100 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
TO-247 Long Leads
Current - Continuous Drain (Id) @ 25°C:
72A (Tc)
Power Dissipation (Max):
480W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STWA68
ECCN:
EAR99
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This is Dual N-Channel MOSFET 72 A 650 V 3-Pin TO247-3 manufactured by STMicroelectronics. The manufacturer part number is STWA68N65DM6AG. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.039 ω maximum drain source resistance. The package is a sort of to-247. It consists of 2 elements per chip. While 72 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 39mohm @ 36a, 10v. The maximum gate charge and given voltages include 118 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 5900 pf @ 100 v. It has a long 26 weeks standard lead time. The product automotive, aec-q101, is a highly preferred choice for users. to-247 long leads is the supplier device package value. The continuous current drain at 25°C is 72a (tc). The product carries maximum power dissipation 480w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stwa68, a base product number of the product. The product is designated with the ear99 code number.
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