Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.067 Ω
Package Type:
H2PAK-7
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTH35N65G2V-7AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
edacadModelUrl:
/en/models/11686343
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH35
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is SCTH35N65G2V-7AG. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 ω maximum drain source resistance. The package is a sort of h2pak-7. It consists of 2 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 208w (tc). The product's input capacitance at maximum includes 1370 pf @ 400 v. It has a long 52 weeks standard lead time. The product is automotive, a grade of class. h2pak-7 is the supplier device package value. The continuous current drain at 25°C is 45a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to scth35, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.