Maximum Continuous Drain Current:
334 A
Transistor Material:
Si
Width:
23.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
5V
Package Type:
SMPD
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
670 nC @ 10 V
Channel Type:
N
Length:
25.25mm
Pin Count:
24
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
680 W
Series:
GigaMOS, HiperFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
5.7mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.6 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
24-PowerSMD, 21 Leads
Rds On (Max) @ Id, Vgs:
2.6mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
670 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
680W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4700 pF @ 10 V
standardLeadTime:
45 Weeks
Mounting Type:
Surface Mount
Series:
GigaMOS™, HiPerFET™, TrenchT2™
Supplier Device Package:
24-SMPD
Current - Continuous Drain (Id) @ 25°C:
334A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MMIX1F420
ECCN:
EAR99
This is manufactured by IXYS. The manufacturer part number is MMIX1F420N10T. While 334 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 23.25mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of smpd. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 670 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 25.25mm. It contains 24 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 680 w maximum power dissipation. The product gigamos, hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 5.7mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.6 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 8ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 24-powersmd, 21 leads. It has a maximum Rds On and voltage of 2.6mohm @ 60a, 10v. The maximum gate charge and given voltages include 670 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 680w (tc). The product's input capacitance at maximum includes 4700 pf @ 10 v. It has a long 45 weeks standard lead time. The product gigamos™, hiperfet™, trencht2™, is a highly preferred choice for users. 24-smpd is the supplier device package value. The continuous current drain at 25°C is 334a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to mmix1f420, a base product number of the product. The product is designated with the ear99 code number.
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