Toshiba Memory America, Inc. TH58NYG2S3HBAI6
Product Information
Memory Type:
Non-Volatile
Detailed Description:
FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 63-BGA (9x11)
Mounting Type:
Surface Mount
Memory Interface:
Parallel
Supplier Device Package:
63-BGA (9x11)
Write Cycle Time - Word, Page:
25ns
Packaging:
Tray
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Gb (512M x 8)
Voltage - Supply:
1.7V ~ 1.95V
Package / Case:
63-BGA
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Manufacturer:
Toshiba Memory America, Inc.
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Yes. We ship TH58NYG2S3HBAI6 Internationally to many countries around the world.
This is manufactured by Toshiba Memory America, Inc.. The manufacturer part number is TH58NYG2S3HBAI6. It is a type of non-volatile memory type. It features flash - nand (slc) memory ic 4gb (512m x 8) parallel 63-bga (9x11). The product is available in surface mount configuration. It is a parallel memory interface. 63-bga (9x11) is the supplier device package value. It allows a 25ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4gb (512m x 8). It has optimum voltage supply of 1.7v ~ 1.95v. Moreover, the product comes in 63-bga. It is a sort of flash memory. This product use flash - nand (slc) technology. The toshiba memory america, inc.'s product offers user-desired applications.
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