Toshiba Memory America, Inc. TH58NYG2S3HBAI4
Product Information
Memory Type:
Non-Volatile
Detailed Description:
FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 63-BGA (9x11)
Mounting Type:
Surface Mount
Memory Interface:
Parallel
Supplier Device Package:
63-BGA (9x11)
Write Cycle Time - Word, Page:
25ns
Packaging:
Tray
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Gb (512M x 8)
Voltage - Supply:
1.7V ~ 1.95V
Package / Case:
63-BGA
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Manufacturer:
Toshiba Memory America, Inc.
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Yes. Our products in Memory category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET16711019 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Memory America, Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET16711019.
Yes. We ship TH58NYG2S3HBAI4 Internationally to many countries around the world.
This is manufactured by Toshiba Memory America, Inc.. The manufacturer part number is TH58NYG2S3HBAI4. It is a type of non-volatile memory type. It features flash - nand (slc) memory ic 4gb (512m x 8) parallel 63-bga (9x11). The product is available in surface mount configuration. It is a parallel memory interface. 63-bga (9x11) is the supplier device package value. It allows a 25ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4gb (512m x 8). It has optimum voltage supply of 1.7v ~ 1.95v. Moreover, the product comes in 63-bga. It is a sort of flash memory. This product use flash - nand (slc) technology. The toshiba memory america, inc.'s product offers user-desired applications.
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