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This is manufactured by Toshiba Memory America, Inc.. The manufacturer part number is TH58BYG2S3HBAI6. It is a type of non-volatile memory type. It features flash - nand (slc) memory ic 4gb (512m x 8) parallel 25ns 67-vfbga (6.5x8). The product is available in surface mount configuration. The product benand™, is a highly preferred choice for users. It is a parallel memory interface. 67-vfbga (6.5x8) is the supplier device package value. It allows a 25ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4gb (512m x 8). It has optimum voltage supply of 1.7v ~ 1.95v. Moreover, the product comes in 67-vfbga. It is a sort of flash memory. This product use flash - nand (slc) technology. It allows 25ns access time. The toshiba memory america, inc.'s product offers user-desired applications.
For more information please check the datasheets.
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