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Goford Semiconductor G220P03D32

G220P03D32 Goford Semiconductor
Goford Semiconductor

Product Information

FET Feature:
Standard
HTSUS:
8541.29.0000
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Configuration:
2 P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
1305pF @ 15V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (3.15x3.05) Dual
Power - Max:
30W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Goford Semiconductor. The manufacturer part number is G220P03D32. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0000. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 22mohm @ 3a, 10v. The maximum gate charge and given voltages include 25nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 12a (tc). The product is available in 2 p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 1305pf @ 15v. It has a long 8 weeks standard lead time. The product is available in surface mount configuration. 8-dfn (3.15x3.05) dual is the supplier device package value. The maximum power of the product is 30w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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G220P03D32(Datasheets)

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