FET Feature:
Logic Level Gate, 4.5V Drive
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V, 11nC @ 4.5V
Rds On (Max) @ Id, Vgs:
24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta), 8A (Ta)
Configuration:
2 N-Channel (Dual), Schottky
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
630pF @ 10V, 1330pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOP
Power - Max:
1.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
HAT2210
ECCN:
EAR99
This is manufactured by Renesas Electronics Corporation. The manufacturer part number is HAT2210RWS-E. The FET features of the product include logic level gate, 4.5v drive. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 4.6nc @ 4.5v, 11nc @ 4.5v. It has a maximum Rds On and voltage of 24mohm @ 3.75a, 10v, 22mohm @ 4a, 10v. The continuous current drain at 25°C is 7.5a (ta), 8a (ta). The product is available in 2 n-channel (dual), schottky configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 630pf @ 10v, 1330pf @ 10v. The product is available in surface mount configuration. 8-sop is the supplier device package value. The maximum power of the product is 1.5w (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to hat2210, a base product number of the product. The product is designated with the ear99 code number.
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