FET Feature:
Standard
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-XFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
0.9nC @ 4.5V, 0.8nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
Configuration:
N and P-Channel Complementary
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
43.6pF @ 10V, 53.5pF @ 10V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010B-6
Power - Max:
280mW (Ta), 6W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99