Microchip Technology MSCSM120X10CTYZBNMG

Microchip Technology

Product Information

FET Feature:
Silicon Carbide (SiC)
Vgs(th) (Max) @ Id:
2.8V @ 1mA, 2.7V @ 2mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs:
64nC @ 20V, 137nC @ 20V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
28A (Tc), 49A (Tc)
Configuration:
6 N-Channel (3-Phase Bridge)
Package:
Bulk
Drain to Source Voltage (Vdss):
1200V
Input Capacitance (Ciss) (Max) @ Vds:
838pF @ 1000V, 1990pF @ 1000V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
-
Power - Max:
116W (Tc), 196W (Tc)
Technology:
Silicon Carbide (SiC)
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This is manufactured by Microchip Technology. The manufacturer part number is MSCSM120X10CTYZBNMG. The FET features of the product include silicon carbide (sic). The typical Vgs (th) (max) of the product is 2.8v @ 1ma, 2.7v @ 2ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 100mohm @ 15a, 20v, 50mohm @ 40a, 20v. The maximum gate charge and given voltages include 64nc @ 20v, 137nc @ 20v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 28a (tc), 49a (tc). The product is available in 6 n-channel (3-phase bridge) configuration. It is shipped in bulk package . The product has a 1200v drain to source voltage. The product's input capacitance at maximum includes 838pf @ 1000v, 1990pf @ 1000v. The product is available in chassis mount configuration. The maximum power of the product is 116w (tc), 196w (tc). This product use silicon carbide (sic) technology.

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MSCSM120X10CTYZBNMG(Datasheets)

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