FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 4.5V, 11.5nC @ 4.5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.15V @ 250µA
Current - Continuous Drain (Id) @ 25°C:
20A (Ta)
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 15V, 1632pF @ 15V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-LSON (3.3x3.3)
Packaging:
Bulk
Power - Max:
6W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87330
ECCN:
EAR99
