Automotive Standard:
No
Maximum Power Dissipation Pd:
352W
Maximum Drain Source Voltage Vds:
900V
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
18 V
Series:
NXH020U90MNF2PTG
Forward Voltage Vf:
6V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
546.4nC
Package Type:
F2-VIENNA: Case 180BZ
Minimum Operating Temperature:
-40°C
Maximum Drain Source Resistance Rds:
14mΩ
Standards/Approvals:
Halide Free, Pb-Free, RoHS
Maximum Continuous Drain Current Id:
149A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
20
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
14mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs:
546.4nC @ 15V
Vgs(th) (Max) @ Id:
4.3V @ 40mA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
149A (Tc)
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
900V
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
7007pF @ 450V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
-
Packaging:
Tray
Power - Max:
352W (Tj)
Technology:
Silicon Carbide (SiC)
Base Product Number:
NXH020
ECCN:
EAR99
