FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
title:
CSD86350Q5DT
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.6V @ 250µA
REACH Status:
REACH Affected
edacadModel:
CSD86350Q5DT Models
Current - Continuous Drain (Id) @ 25°C:
40A (Ta)
edacadModelUrl:
/en/models/11310631
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1870pF @ 12.5V, 4000pF @ 12.5V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
10.7nC @ 4.5V, 25nC @ 4.5V
Supplier Device Package:
8-LSON (5x6)
Packaging:
Tape & Reel (TR)
Power - Max:
13W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD86350
ECCN:
EAR99
