Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
23 (Q1) nC @ 10 V, 84 (Q2) nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
26 W, 42 W
Maximum Gate Source Voltage:
+16/-12 (Q1, Q2) V
Maximum Gate Threshold Voltage:
2.5 (Q1) V, 3 (Q2) V
Channel Type:
N
Width:
6.15mm
Length:
5.1mm
Maximum Drain Source Resistance:
1.6 mΩ
Package Type:
PQFN 5 x 6
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
70 A, 164 A
Minimum Gate Threshold Voltage:
0.8 (Q1) V, 1 (Q2) V
Forward Diode Voltage:
1.2V
Height:
0.75mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
FET Feature:
-
Series:
*
REACH Status:
REACH Unaffected
Moisture Sensitivity Level (MSL):
Vendor Undefined
Packaging:
Bulk
Technology:
-
Base Product Number:
FDMS1
Manufacturer:
onsemi
