Toshiba Semiconductor and Storage SSM6N35AFE,LF
Product Information
FET Feature:
Logic Level Gate, 1.2V Drive
Base Part Number:
SSM6N35
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 250mA (Ta) 250mW Surface Mount ES6
Input Capacitance (Ciss) (Max) @ Vds:
36pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
0.34nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 100µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
1.1Ohm @ 150mA, 4.5V
Supplier Device Package:
ES6
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. We ship SSM6N35AFE,LF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N35AFE,LF. The FET features of the product include logic level gate, 1.2v drive. Base Part Number: ssm6n35. It features mosfet array 2 n-channel (dual) 20v 250ma (ta) 250mw surface mount es6. The product's input capacitance at maximum includes 36pf @ 10v. The maximum gate charge and given voltages include 0.34nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 100µa. The product has a 20v drain to source voltage. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 1.1ohm @ 150ma, 4.5v. es6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 250mw. The continuous current drain at 25°C is 250ma (ta). The toshiba semiconductor and storage's product offers user-desired applications.
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