Vishay Siliconix SI4501ADY-T1-E3
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
SI4501
Detailed Description:
Mosfet Array N and P-Channel, Common Drain 30V, 8V 6.3A, 4.1A 1.3W Surface Mount 8-SO
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Series:
TrenchFET®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 8.8A, 10V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel, Common Drain
Customer Reference:
Power - Max:
1.3W
Drain to Source Voltage (Vdss):
30V, 8V
Current - Continuous Drain (Id) @ 25°C:
6.3A, 4.1A
Manufacturer:
Vishay Siliconix
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FAQs
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Yes. Our products in FET, MOSFET Arrays category are shipped in lowest possible time.
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Yes. We ship SI4501ADY-T1-E3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI4501ADY-T1-E3. The FET features of the product include logic level gate. Base Part Number: si4501. It features mosfet array n and p-channel, common drain 30v, 8v 6.3a, 4.1a 1.3w surface mount 8-so. The maximum gate charge and given voltages include 20nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.8v @ 250µa. The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 18mohm @ 8.8a, 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel, common drain. The maximum power of the product is 1.3w. The product has a 30v, 8v drain to source voltage. The continuous current drain at 25°C is 6.3a, 4.1a. The vishay siliconix's product offers user-desired applications.
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