Texas Instruments CSD87350Q5D
Product Information
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 4.5 V, 8.4 nC @ 4.5 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12 W
Series:
NexFET
Maximum Gate Source Voltage:
+8 V
Height:
1.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.2 mΩ, 5 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 20A, 8V
Gate Charge (Qg) (Max) @ Vgs:
10.9nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD87350Q5D Models
Current - Continuous Drain (Id) @ 25°C:
40A
edacadModelUrl:
/en/models/2615900
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1770pF @ 15V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-LSON (5x6)
Power - Max:
12W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87350Q5
ECCN:
EAR99
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This is manufactured by Texas Instruments. The manufacturer part number is CSD87350Q5D. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers series transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of son. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 20 nc @ 4.5 v, 8.4 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 12 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of +8 v. In addition, the height is 1.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.2 mω, 5 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powerldfn. It has a maximum Rds On and voltage of 5.9mohm @ 20a, 8v. The maximum gate charge and given voltages include 10.9nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 40a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1770pf @ 15v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-lson (5x6) is the supplier device package value. The maximum power of the product is 12w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd87350q5, a base product number of the product. The product is designated with the ear99 code number.
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