Toshiba Semiconductor and Storage SSM6P35FE(TE85L,F)
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
8Ohm @ 50mA, 4V
edacadModel:
SSM6P35FE(TE85L,F) Models
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
RoHS Compliant
Current - Continuous Drain (Id) @ 25°C:
100mA
edacadModelUrl:
/en/models/2257786
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
12.2pF @ 3V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Power - Max:
150mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6P35
ECCN:
EAR99
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Yes. We ship SSM6P35FE(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P35FE(TE85L,F). The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 8ohm @ 50ma, 4v. The product is rohs compliant. The continuous current drain at 25°C is 100ma. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 12.2pf @ 3v. The product is available in surface mount configuration. es6 is the supplier device package value. The maximum power of the product is 150mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6p35, a base product number of the product. The product is designated with the ear99 code number.
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