Mounting Type:
Panel Mount
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
125ns
Peak Non-Repetitive Forward Surge Current:
420A
Maximum Forward Voltage Drop:
1.25V
Maximum Continuous Forward Current:
120A
Rectifier Type:
Switching
Package Type:
ISOTOP
Number of Elements per Chip:
2
Diode Type:
Rectifier
Diode Configuration:
Isolated
Pin Count:
4
Peak Reverse Repetitive Voltage:
1200V
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
ISOTOP
Diode Configuration:
2 Independent
Reverse Recovery Time (trr):
125 ns
Operating Temperature - Junction:
150°C (Max)
REACH Status:
REACH Unaffected
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
2.25 V @ 60 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
1200 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
60A
standardLeadTime:
25 Weeks
Current - Reverse Leakage @ Vr:
30 µA @ 1200 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
ISOTOP®
Technology:
Standard
Base Product Number:
STTH12012
ECCN:
EAR99
The STTH12012TV1 is a high-performance dual rectifier diode manufactured by STMicroelectronics. It is a Schottky diode that provides excellent power efficiency and high current capability for applications in power electronics, industrial automation, and motor control systems. In this article, we will discuss the features and benefits of the STTH12012TV1 rectifier diode in detail.
Features and Benefits of STTH12012TV1, STMicroelectronics Dual Rectifier Diode:
Applications of STTH12012TV1, STMicroelectronics Dual Rectifier Diode:
The STTH12012TV1 rectifier diode is ideal for use in a wide range of applications that require high-power rectification, including:
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