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Toshiba Semiconductor and Storage HN1D03FU,LF

HN1D03FU-LF Toshiba Semiconductor and Storage HN1D03FU,LF
Toshiba Semiconductor and Storage

Product Information

Reverse Recovery Time (trr):
4 ns
HTSUS:
8541.10.0070
RoHS Status:
ROHS3 Compliant
Package / Case:
6-TSSOP, SC-88, SOT-363
Diode Configuration:
2 Pair CA + CC
edacadModel:
HN1D03FU,LF Models
Operating Temperature - Junction:
125°C (Max)
Speed:
Small Signal =< 200mA (Io), Any Speed
edacadModelUrl:
/en/models/4516305
Voltage - Forward (Vf) (Max) @ If:
1.2 V @ 100 mA
Package:
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max):
80 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
80mA
standardLeadTime:
40 Weeks
Current - Reverse Leakage @ Vr:
500 nA @ 80 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Technology:
Standard
Base Product Number:
HN1D03
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1D03FU,LF. It has a trr (reverse recovery time) of 4 ns. It is assigned with possible HTSUS value of 8541.10.0070. The product is rohs3 compliant. Moreover, the product comes in 6-tssop, sc-88, sot-363. The diode features a 2 pair ca + cc configuration. The product operate at temperatures ranging from 125°c (max). It has a robust speed of small signal =< 200ma (io), any speed. The product has a maximum forward voltage of 1.2 v @ 100 ma. It is shipped in tape & reel (tr) package . While it has maximum reverse voltage of 80 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 80ma. It has a long 40 weeks standard lead time. 500 na @ 80 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. us6 is the supplier device package value. This product use standard technology. Moreover, it corresponds to hn1d03, a base product number of the product. The product is designated with the ear99 code number.

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Marking Chg 08/Feb/2016(PCN Packaging)

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