ON Semiconductor MMBT5550LT1G
Product Information
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Maximum Collector Base Voltage:
160 V dc
Maximum Collector Emitter Voltage:
140 V
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MMBT5550
Detailed Description:
Bipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MMBT5550LT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MMBT5550LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum 0.25 v dc collector emitter saturation voltage . Additionally, it has 160 v dc maximum collector base voltage. Whereas features a 140 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v dc base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: mmbt5550. It features bipolar (bjt) transistor npn 140v 600ma 225mw surface mount sot-23-3 (to-236). Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The 250mv @ 5ma, 50ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 140v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 600ma. In addition, 100na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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