Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Maximum Collector Base Voltage:
160 V dc
Maximum Collector Emitter Voltage:
140 V
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
MMBT5550
Detailed Description:
Bipolar (BJT) Transistor NPN 140V 600mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
140V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
100nA
Manufacturer:
ON Semiconductor
