Toshiba Semiconductor and Storage HN1A01FE-Y,LXHF
Product Information
Current - Collector (Ic) (Max):
150mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 PNP (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
ES6
Power - Max:
100mW
Base Product Number:
HN1A01
ECCN:
EAR99
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Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
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Yes. We ship HN1A01FE-Y,LXHF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1A01FE-Y,LXHF. The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 pnp (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 52 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. es6 is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to hn1a01, a base product number of the product. The product is designated with the ear99 code number.
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