Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
HN1C03
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 4mA, 2V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
30MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
100mV @ 3mA, 30mA
Supplier Device Package:
US6
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
300mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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You can order Toshiba Semiconductor and Storage brand products with HN1C03FU-A(TE85L,F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F.
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Yes. We ship HN1C03FU-A(TE85L,F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1C03FU-A(TE85L,F. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: hn1c03. It features bipolar (bjt) transistor array 2 npn (dual) 20v 300ma 30mhz 200mw surface mount us6. Furthermore, 200 @ 4ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 30mhz. The product is available in surface mount configuration. The 100mv @ 3ma, 30ma is the maximum Vce saturation. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 300ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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