This is manufactured by Nexperia USA Inc.. The manufacturer part number is PBSS4112PAN,115. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: pbss4112. It features bipolar (bjt) transistor array 2 npn (dual) 120v 1a 120mhz 510mw surface mount 6-huson-ep (2x2). Furthermore, 60 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 120mv @ 50ma, 500ma is the maximum Vce saturation. 6-huson-ep (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 510mw. Moreover, the product comes in 6-udfn exposed pad. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The nexperia usa inc.'s product offers user-desired applications.
PBSS4112PAN,115 Datasheet(Datasheets)
DFN2020-yy Series Assembly Materials Chg 17/Apr/2016(PCN Design/Specification)
Material Chg 14/Feb/2016(PCN Design/Specification)
Label Chg 12/Mar/2017(PCN Packaging)
All Dev Label Chgs 2/Aug/2020(PCN Packaging)
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You can order Nexperia USA Inc. brand products with PBSS4112PAN,115 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
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Yes. We ship PBSS4112PAN,115 Internationally to many countries around the world.
This is manufactured by Nexperia USA Inc.. The manufacturer part number is PBSS4112PAN,115. It has typical 20 weeks of manufacturer standard lead time. Base Part Number: pbss4112. It features bipolar (bjt) transistor array 2 npn (dual) 120v 1a 120mhz 510mw surface mount 6-huson-ep (2x2). Furthermore, 60 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 120mv @ 50ma, 500ma is the maximum Vce saturation. 6-huson-ep (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 510mw. Moreover, the product comes in 6-udfn exposed pad. The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The nexperia usa inc.'s product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.