Toshiba Semiconductor and Storage HN4A56JU(TE85L,F)
Product Information
Base Part Number:
TLP293
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 60MHz 200mW Surface Mount USV
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
60MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Supplier Device Package:
USV
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
5-TSSOP, SC-70-5, SOT-353
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Bipolar Transistor Arrays category are shipped in lowest possible time.
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Yes. We ship HN4A56JU(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4A56JU(TE85L,F). Base Part Number: tlp293. It features bipolar (bjt) transistor array 2 pnp (dual) 50v 150ma 60mhz 200mw surface mount usv. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 60mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. usv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in 5-tssop, sc-70-5, sot-353. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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