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Photodiodes | Pin Photodiodes | Dual Photodiodes

New items

SFH 2400 FA-Z, OSRAM Opto Semiconductors

PIN Photodiode, Sensitive Area 1x1mm This family of surface mount (SMD) PIN photodiodes, from OSRAM Opto Semiconductors, have a radiant sensitive area of 1 x 1 mm². They are in Smart DIL packages and are available with or without daylight filter. Suitable applications include; industrial electronics, automotive (rain sensor, headset etc.) and photointerrupters. SFH2400FAZ with daylight filter IR Photodiodes, OSRAM Opto Semiconductors

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New items

BPW 34, OSRAM Opto Semiconductors

PIN Photodiode DIL Package This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc. IR Photodiodes, OSRAM Opto Semiconductors

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New items

BPW 34 S-Z, OSRAM Opto Semiconductors

PIN Photodiode DIL Package This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc. IR Photodiodes, OSRAM Opto Semiconductors

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New items

PIN-RD100, OSI Optoelectronics

These Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. These Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. Product Applications Laser Applications Control Systems Electron Detection High Energy Physics Medical Instrumentation Product Features Large Active Area Fully Depleteable Fast Response Ultra Low Dark Current

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New items

OSD1-5T, Centronic

5T Series Photodiodes The 5T series, from Centronic, are a family of silicon photodetectors. They have a high blue sensitivity with high resistance and low dark leakage current. They offer photovoltaic or reverse bias operation modes for a lower capacitance. The 5T photodetectors are ideal for applications with low light levels (430 to 900nm) and applications where a high signal to noise ratio is essential. They are ideal economical photodetectors for applications where high speed responses are not required. Features of the 5T series silicon photodetectors: Blue sensitive Operating temperature: -25 to +75 °C Active area: 1 to 300 mm² Single elements, quadrants, linear arrays and matrix arrays Photodiodes, Centronic

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New items

PIN-020A, OSI Optoelectronics

OSI Photoconductive Series Photodiodes The Photoconductive series, from OSI Optoelectronics, are planar diffused silicon photodiodes designed for high speed and high sensitivity applications.Their spectral range (350-1100nm) makes the Photoconductive series suitable for visible and near IR applications. These general purpose photodiodes are suitable for applications including; pulse detectors, bar code readers, optical remote control, optical communications, medical equipment and high speed photometry. Features of the Photoconductive series: High responsivity Low capacitance Low dark current Wide dynamic range Photodiodes, OSI Optoelectronics

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New items

BPX 61, OSRAM Opto Semiconductors

PIN Photodiode TO-39 Package This BPX 61, from OSRAM Opto Semiconductors, is a silicon PIN photodiode in a hermetically sealed TO-39 package. It is designed for applications with a wavelength of 400 to 1100 nm. Suitable applications for the BPX 61 photodiode include; industrial electronics, photointerrupters, IR remote control and for control/drive circuits. Features of the BPX 61 photodiode: TO-39 package (similar to TO-5) Hermetically sealed metal can Suitable for applications up to 125°C Short switching time IR Photodiodes, OSRAM Opto Semiconductors

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New items

VEMD5060X01, Vishay

VEMD5060X01 is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible and near infrared radiation. Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4 x 0.9 Radiant sensitive area (in mm2): 7.5 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Excellent Ira linearity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 65° Floor life: 72 h, MSL 4, according to J-STD-020 APPLICATIONS: High speed photo detector Small signal detection Proximity sensors

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New items

K857PH, Vishay

The Vishay silicon PIN photodiode based on homogeneous technology. It is a 4-quadrant photo detector in surface-mount package. The each quadrant PD has an active area of 1.6 mm2. Dimensions 4.72 x 4.72 x 0.75 mm AEC-Q101 qualified

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New items

FCI-INGAAS-120L-FC, OSI Optoelectronics

OSI High Speed InGaAs Photodiodes The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. This family of photodiodes are in 3-pin isolated TO-46 packages or 1-pin pill packages. Suitable applications include; high speed optical communications, fibre optic receivers, Gigabit Ethernet and optical taps. Features: High speed High responsivity Low noise Spectral range: 900nm to 1700nm Photodiodes, OSI Optoelectronics

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New items

G12180-003A, Hamamatsu Photonics

The Hamamatsu Photonics InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Its provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. Low noise, low dark current Low terminal capacitance Large photosensitive area

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New items

G12180-005A, Hamamatsu Photonics

The Hamamatsu Photonics InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Its provides various types of InGaAs PIN photodiodes with photosensitive area from ϕ0.3 mm to ϕ5 mm. Low noise, low dark current Low terminal capacitance Large photosensitive area

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