Category:
Power MOSFET
Dimensions:
3.04 x 2.64 x 1.02mm
Maximum Continuous Drain Current:
4.3 A
Transistor Material:
Si
Width:
2.64mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Drain Source Resistance:
120 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
830 pF @ -10 V
Length:
3.04mm
Pin Count:
3
Forward Transconductance:
8.6S
Typical Turn-Off Delay Time:
250 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Series:
HEXFET
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.02mm
Typical Turn-On Delay Time:
11 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
