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Manufacturer : Infineon
Manufacturer Part No : IRF7331PBF
Enrgtech Part No : ET14041424
Product Range : PolySwitch RXEF Series

Infineon IRF7331PBF Dual N-channel MOSFET, 7 A, 20 V HEXFET, 8-Pin SOIC

Dual N-Channel Power MOSFET, Infineon Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration. MOSFET Transistors, Infineon Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Product Information

Category : Power MOSFET
Dimensions : 5 x 4 x 1.5mm
Maximum Continuous Drain Current : 7 A
Transistor Material : Si
Width : 4mm
Transistor Configuration : Isolated
Maximum Drain Source Voltage : 20 V
Maximum Gate Threshold Voltage : 1.2V
Package Type : SOIC
Number of Elements per Chip : 2
Minimum Gate Threshold Voltage : 0.6V
Maximum Operating Temperature : +150 °C
rohs : RoHS Certificate of Compliance
Typical Gate Charge @ Vgs : 13 nC @ 4.5 V
Channel Type : N
Typical Input Capacitance @ Vds : 1340 pF@ 16 V
Length : 5mm
Pin Count : 8
Typical Turn-Off Delay Time : 110 ns
Mounting Type : Surface Mount
Channel Mode : Enhancement
Maximum Power Dissipation : 2 W
Series : HEXFET
Maximum Gate Source Voltage : ±12 V
Height : 1.5mm
Typical Turn-On Delay Time : 7.6 ns
Minimum Operating Temperature : -55 °C
Maximum Drain Source Resistance : 30 mΩ

Technical Documents


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