Dimensions:
1.05 x 0.65 x 0.36mm
Maximum Continuous Drain Current:
680 mA
Transistor Material:
Si
Width:
0.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
SOT-883B
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.76 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
58 pF @ -10 V
Length:
1.05mm
Pin Count:
3
Typical Turn-Off Delay Time:
80 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Maximum Gate Source Voltage:
±8 V
Height:
0.36mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
850 mΩ
This is P-channel MOSFET 680 mA 20 V 3-Pin SOT-883B manufactured by Nexperia. The manufacturer part number is PMZB670UPE. The given dimensions of the product include 1.05 x 0.65 x 0.36mm. While 680 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 0.65mm wide. The product offers single transistor configuration. It has a maximum of 20 v drain source voltage. The product carries 1.3v of maximum gate threshold voltage. The package is a sort of sot-883b. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.76 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 58 pf @ -10 v . Its accurate length is 1.05mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 80 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.7 w maximum power dissipation. It features a maximum gate source voltage of ±8 v. In addition, the height is 0.36mm. In addition, it has a typical 18 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 850 mω maximum drain source resistance.
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