Infineon IRFS7434-7PPBF N-channel MOSFET, 362 A, 40 V HEXFET, 7-Pin D2PAK
Product Information
Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
362 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
210 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
10250 pF @ 25 V
Length:
10.67mm
Pin Count:
7
Forward Transconductance:
156S
Typical Turn-Off Delay Time:
107 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
245 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
4.83mm
Typical Turn-On Delay Time:
23 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
1.5 mΩ
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This is N-channel MOSFET 362 A 40 V HEXFET 7-Pin D2PAK manufactured by Infineon. The manufacturer part number is IRFS7434-7PPBF. It is of power mosfet category . The given dimensions of the product include 10.67 x 9.65 x 4.83mm. While 362 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of d2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 210 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 10250 pf @ 25 v . Its accurate length is 10.67mm. It contains 7 pins. The forward transconductance is 156s . Whereas, its typical turn-off delay time is about 107 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 245 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 4.83mm. In addition, it has a typical 23 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 1.5 mω maximum drain source resistance.
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