Infineon IRFH5215TR2PBF N-channel MOSFET Transistor, 27 A, 150 V HEXFET, 8-Pin PQFN
Product Information
Category:
Power MOSFET
Dimensions:
6 x 5 x 0.85mm
Maximum Continuous Drain Current:
27 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
58 mΩ
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1350 pF @ 50 V
Length:
6mm
Pin Count:
8
Typical Turn-Off Delay Time:
11 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
104 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.85mm
Typical Turn-On Delay Time:
6.7 ns
Minimum Operating Temperature:
-55 °C
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This is N-channel MOSFET Transistor 27 A 150 V HEXFET 8-Pin PQFN manufactured by Infineon. The manufacturer part number is IRFH5215TR2PBF. It is of power mosfet category . The given dimensions of the product include 6 x 5 x 0.85mm. While 27 a of maximum continuous drain current. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The product carries 5v of maximum gate threshold voltage. It provides up to 58 mω maximum drain source resistance. The package is a sort of pqfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1350 pf @ 50 v . Its accurate length is 6mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 11 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 104 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.85mm. In addition, it has a typical 6.7 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.
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