Infineon IRFU1018EPBF N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin IPAK
Product Information
Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
79 A
Transistor Material:
Si
Width:
2.39mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
46 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2290 pF@ 50 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
6.22mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 mΩ
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This is N-channel MOSFET 79 A 60 V HEXFET 3-Pin IPAK manufactured by Infineon. The manufacturer part number is IRFU1018EPBF. It is of power mosfet category . The given dimensions of the product include 6.73 x 2.39 x 6.22mm. While 79 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.39mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of ipak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 2290 pf@ 50 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 55 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 110 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 6.22mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 mω maximum drain source resistance.
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