Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
32nC
Maximum Drain Source Resistance Rds:
150mΩ
Maximum Gate Source Voltage Vgs:
30 V
Height:
4.6mm
Width:
10.4 mm
Length:
28.9mm
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
20A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
150mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
Vgs(th) (Max) @ Id:
4.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STP65N150M9 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/16904151
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
140W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1239 pF @ 400 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
