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This is manufactured by Goford Semiconductor. The manufacturer part number is GC11N65T. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 360mohm @ 5.5a, 10v. The maximum gate charge and given voltages include 21 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 192w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 901 pf @ 50 v. The product is available in through hole configuration. The product cool mos™, is a highly preferred choice for users. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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