Harris Corporation BUZ32
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
RoHS Status:
RoHS non-compliant
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
FET Type:
N-Channel
Package:
Tube
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Power Dissipation (Max):
75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
9.5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
Yes. You can also search BUZ32 on website for other similar products.
We accept all major payment methods for all products including ET22640903. Please check your shopping cart at the time of order.
You can order Harris Corporation brand products with BUZ32 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Harris Corporation BUZ32. You can also check on our website or by contacting our customer support team for further order details on Harris Corporation BUZ32.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET22640903 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Harris Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET22640903.
Yes. We ship BUZ32 Internationally to many countries around the world.
This is manufactured by Harris Corporation. The manufacturer part number is BUZ32. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The product is rohs non-compliant. It has a maximum Rds On and voltage of 400mohm @ 4.5a, 10v. It carries FET type n-channel. It is shipped in tube package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 75w (tc). The product's input capacitance at maximum includes 2000 pf @ 25 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 9.5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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