NXP Semiconductors PSMN6R0-30YLB,115
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.95V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
58W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1088 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LFPAK56, Power-SO8
Current - Continuous Drain (Id) @ 25°C:
71A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN6R0-30YLB,115. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.95v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. The maximum gate charge and given voltages include 19 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 6.5mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 58w (tc). The product's input capacitance at maximum includes 1088 pf @ 15 v. The product is available in surface mount configuration. lfpak56, power-so8 is the supplier device package value. The continuous current drain at 25°C is 71a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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