NXP Semiconductors PHD71NQ03LT,118
Product Information
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
13.2 nC @ 5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
10mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1220 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship PHD71NQ03LT,118 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PHD71NQ03LT,118. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 13.2 nc @ 5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 10mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in bulk package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 120w (tc). The product's input capacitance at maximum includes 1220 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology.
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