Infineon Technologies IRF6616TRPBF
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
DirectFET™ Isometric MX
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 4.5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
5mOhm @ 19A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
2.8W (Ta), 89W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3765 pF @ 20 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
DIRECTFET™ MX
Current - Continuous Drain (Id) @ 25°C:
19A (Ta), 106A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order Infineon Technologies brand products with IRF6616TRPBF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IRF6616TRPBF. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IRF6616TRPBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21929352 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21929352.
Yes. We ship IRF6616TRPBF Internationally to many countries around the world.
This is manufactured by Infineon Technologies. The manufacturer part number is IRF6616TRPBF. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.25v @ 250µa. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in directfet™ isometric mx. The maximum gate charge and given voltages include 44 nc @ 4.5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 5mohm @ 19a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 2.8w (ta), 89w (tc). The product's input capacitance at maximum includes 3765 pf @ 20 v. The product is available in surface mount configuration. The product hexfet®, is a highly preferred choice for users. directfet™ mx is the supplier device package value. The continuous current drain at 25°C is 19a (ta), 106a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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